Investigation of KOH anisotropic etching of Si <100> wafers for improving etched surface quality

Abstract

The main influences of KOH anisotropic etching of Si <100> wafers on etched surface flatness are investigated experimentally. In the Si membrane etching with Si/sub 3/N/sub 4/ mask, the Si/sub 3/N/sub 4/ etching and the sediments in KOH aqueous solution are found as the main influences. The effective method to improve surface quality is presented by the mechanism analysis.