B. Tsui, T. Gan, Ming-da Wu, Hui-Hua Chou, Zhi-Liang Wu, C. Sune
{"title":"A novel fully self-aligned process for high cell density trench gate power MOSFETs","authors":"B. Tsui, T. Gan, Ming-da Wu, Hui-Hua Chou, Zhi-Liang Wu, C. Sune","doi":"10.1109/WCT.2004.239932","DOIUrl":null,"url":null,"abstract":"A novel self-aligned process for high cell density trench gate power MOSFETs with only four mask layers was proposed. The specific on-resistance can be as low as 0.21 m/spl Omega/.cm/sup 2/ With 1.5 /spl mu/m cell pitch and 35 V breakdown voltage. Because this process shrinks trench space but not trench width, the quasi-saturation phenomenon is lighter. After optimization of the thickness of n- drift layer and n+ substrate, a specific on-resistance lower than 0.1 m/spl Omega/.cm/sup 2/ with 0.6 /spl mu/m technology could be expected.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.239932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A novel self-aligned process for high cell density trench gate power MOSFETs with only four mask layers was proposed. The specific on-resistance can be as low as 0.21 m/spl Omega/.cm/sup 2/ With 1.5 /spl mu/m cell pitch and 35 V breakdown voltage. Because this process shrinks trench space but not trench width, the quasi-saturation phenomenon is lighter. After optimization of the thickness of n- drift layer and n+ substrate, a specific on-resistance lower than 0.1 m/spl Omega/.cm/sup 2/ with 0.6 /spl mu/m technology could be expected.