Random discrete dopant induced variability in negative capacitance transistors

Abstract

In this work we investigate the impact of random discrete dopants (RDD) induced statistical variability in ferroelectric negative capacitance field effect transistors (NCFETs). We couple the 3D ‘atomistic’ statistical device simulator GARAND with the Landau — Khalatnikov equation of the ferroelectric for this study. We found that the negative capacitance effect provided by the ferroelectric layer can lead to suppression of the RDD induced variability in the threshold voltage (Vt), OFF-current (IOFF), and ON-current (ION). This immunity to RDD induced variability increases with increase in the ferroelectric thickness.