An accurate determination of the characteristic impedance of lossy lines on chips based on high frequency S-parameter measurements

Thomas-Michael Winkel, L. S. Dutta, Hartmut Grabinski
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引用次数: 30

Abstract

A very accurate, novel determination of the characteristic impedance of interconnects on semiconducting substrates has been developed. The method is based upon high frequency, S-parameter measurements of two transmission lines of different lengths. The influence of the contact structures of the measurement probes are taken into account with the help of three additional measurements. The mathematical background of the method is presented. A comparison of the results obtained from measurements and from calculations is given and shows an excellent agreement.
基于高频s参数测量的芯片上损耗线特性阻抗的精确测定
一种非常准确,新颖的测定半导体衬底上互连特性阻抗的方法已经被开发出来。该方法基于对两条不同长度的传输线的高频s参数测量。通过三个附加测量,考虑了测量探头接触结构的影响。介绍了该方法的数学背景。给出了测量结果和计算结果的比较,结果非常吻合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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