Er-related luminescence in Si:Er epilayers grown with sublimation molecular-beam epitaxy

Abstract

The intra-center 4f-shell transitions 4I13/2 yields 4I15/2 of Er3+ ion introduced into Si crystal under original Sublimation Molecular Beam Epitaxy (SMBE) process are investigated by low temperature photoluminescence spectroscopy with resolution down to 0.5 cm-1. Er-related optically active centers detected in SMBE Si:Er/Si structures are classified based on their spectroscopic features. The novel optically active Er- related center Er-1 specific for SMBE Si:Er/Si structures is identified. A novel type of Si:Er/Si structures namely selectively Er-doped multilayer structures with enhanced luminescence efficiency grown in SMBE process is demonstrated. The features of the energy transfer to Er3+ ions in SMBE Si:Er/Si structures as compared with ion implanted Si:Er/Si structures are discussed.