GaN-HEMT with a Back-Gated Segment for High Voltage Cascodes

Abstract

This work presents the design, fabrication, and measurements of a GaN-HEMT with a back-gated segment and pull-down pin in a GaN-on-Si technology. The device is designed for the use in high voltage cascodes. The static and dynamic characteristics of the device is demonstrated in a three-stage hybrid cascode assembly. The cascode was measured with a blocking voltage up to 1250 V.