A new integration technology platform: Integrated fan-out wafer-level-packaging for mobile applications

Douglas Yu
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引用次数: 45

Abstract

3D sub-system integration of logic and DRAM with TSV is desirable for wide memory bandwidth and reduced power for mobile applications. However, its manufacturing cost, along with testing and heat dissipation, remains to be outstanding issues. A new integration technology platform, InFO, is proposed to address it. In this paper, we compare three main 3D integration architectures: InFO_PoP, FC_PoP and 3DIC with TSV based on mobile product requirements, including system power- performance-profile (form factor), heat dissipation, memory bandwidth and production cycle-time along with cost. InFO not only best optimizes and achieves the requirements, but also more readily integrates partitioned-chips, which further impacts on the manufacturing of the logic/DRAM sub-system.
一个新的集成技术平台:移动应用的集成扇出晶圆级封装
3D子系统集成的逻辑和DRAM与TSV是理想的宽内存带宽和降低功耗的移动应用程序。然而,它的制造成本,以及测试和散热,仍然是悬而未决的问题。为此,提出了一种新的集成技术平台InFO。在本文中,我们比较了三种主要的3D集成架构:InFO_PoP, FC_PoP和3DIC与TSV基于移动产品的需求,包括系统功率-性能配置(外形因素),散热,内存带宽和生产周期时间以及成本。InFO不仅能最好地优化和实现要求,而且更容易集成分区芯片,这进一步影响了逻辑/DRAM子系统的制造。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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