Study and mechanism analysis of photochemical oxidation for n-type mercury cadmium tellurium photoconductance detectors

Abstract

Instead of anodization, photochemical oxidation is used to perform the surface passivation of n-type mercury cadmium tellurium (HgCdTe) photoconductance detectors for the first time. X-ray photoelectron spectroscopy (XPS) is used to analyze the influence of the oxidation condition on the oxidation reaction. The passivation mechanism of photochemical oxidation is also studied. Comparing of the performances of the two kinds of detectors with each other, which were prepared under the same technique conditions by the anodization and the photochemical oxidation respectively, it shows that the results of photochemical oxidation is slightly superior to that of anodic oxidation.