Analysis of the charging kinetics in silver nanoparticles-silica nanocomposite dielectrics at different temperatures

C. Djaou, C. Villeneuve-Faure, K. Makasheva, L. Boudou, G. Teyssèdre
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引用次数: 3

Abstract

Dielectric nanocomposite materials are now involved in a large panel of electrical engineering applications ranging from micro-/nano-electronics to power devices. The performances of all these systems are critically dependent on the evolution of the electrical properties of the dielectric parts, especially under temperature increase. In this study we investigate the impact of a single plane of silver nanoparticles (AgNPs), embedded near the surface of a thin silica (SiO2) layer, on the electric field distribution, the charge injection and the charge dynamic processes for different AgNPs-based nanocomposites and various temperatures in the range 25°C–110°C. The electrical charges are injected locally by using an Atomic Force Microscopy (AFM) tip and the related surface potential profile is probed by Kelvin Probe Force Microscopy (KPFM). To get deeper in the understanding of the physical phenomena, the electric field distribution in the AgNPs-based nanocomposites is computed by using a Finite Element Modeling (FEM). The results show a strong electrostatic coupling between the AFM tip and the AgNPs, as well as between the AgNPs when the AgNPs-plane is embedded in the vicinity of the SiO2-layer surface. At low temperature (25°C) the presence of an AgNPs-plane close to the surface, i.e., at a distance of 7 nm, limits the amount of injected charges. Besides, the AgNPs retain the injected charges and prevent from charge lateral spreading after injection. When the temperature is relatively high (110°C) the amount of injected charges is increased in the nanocomposites compared to low temperatures. Moreover, the speed of lateral charge spreading is increased for the AgNPs-based nanocomposites. All these findings imply that the lateral charge transport in the nanocomposite structures is favored by the closely situated AgNPs because of the strong electrostatic coupling between them, additionally activated by the temperature increase.
不同温度下纳米银-二氧化硅复合电介质的充电动力学分析
介电纳米复合材料现在被广泛应用于从微/纳米电子学到功率器件的电气工程领域。所有这些系统的性能都严重依赖于电介质部分电性能的演变,特别是在温度升高的情况下。在本研究中,我们研究了单平面的银纳米颗粒(AgNPs),嵌入在薄二氧化硅(SiO2)层表面附近,在25°C - 110°C范围内不同温度下,对不同AgNPs纳米复合材料的电场分布、电荷注入和电荷动态过程的影响。利用原子力显微镜(AFM)尖端在局部注入电荷,并利用开尔文探针力显微镜(KPFM)探测相关的表面电位分布。为了加深对物理现象的理解,采用有限元模型计算了agnps纳米复合材料中的电场分布。结果表明,原子力显微镜针尖与AgNPs之间以及当AgNPs平面嵌入sio2层表面附近时,AgNPs与AgNPs之间存在很强的静电耦合。在低温(25°C)下,靠近表面的agnps平面,即在7 nm的距离上,限制了注入电荷的数量。此外,AgNPs还保留了注入的电荷,防止了注入后电荷的横向扩散。当温度相对较高(110℃)时,纳米复合材料中的注入电荷量比低温时增加。此外,agnps基纳米复合材料的横向电荷扩散速度加快。这些结果表明,由于位置较近的AgNPs之间的强静电耦合,加上温度的升高,它们更有利于纳米复合结构中的侧向电荷输运。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
6.40
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