Improved Output Conductance for Low-Voltage Microwave LDMOS Transistors

30th European Solid-State Device Research Conference Pub Date : 2000-09-11 DOI:10.1109/ESSDERC.2000.194816

L. Vestling, R. Valtonen, U. Heinle, J. Ankarcrona, J. Olsson

引用次数: 1

Abstract

A low voltage LDMOS transistor has been investigated in terms of output conductance and its affect on and . By process modifications the output conductance has been reduced resulting in =7.8 GHz and =15.6 GHz for a device with =0.75 . The ratio was increased with 32 % and the breakdown voltage increased from 11 V to 16 V.

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改进的低压微波LDMOS晶体管输出电导

研究了一种低压LDMOS晶体管的输出电导及其对电流的影响。通过工艺修改，输出电导降低到=7.8 GHz和=15.6 GHz，器件为=0.75。该比值提高了32%，击穿电压从11v提高到16v。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

30th European Solid-State Device Research Conference

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