Bipolar switching analysis and negative resistance phenomenon in TiOx-based devices

Abstract

This work addresses the negative resistance phenomenon in TiOx-based resistive-switching cells applied in RRAM. The switching behavior of the Ag (or Pt, top)/TiOx/Pt (bottom) structure was also carefully analyzed. The negative resistance phenomenon and switching behavior can be modeled to space-charge-limited conduction (SCLC) mechanism with asymmetric electron trapping centers. A two-variable model based on SCLC is also proposed.