VLSI design and comparative analysis of memory BIST controllers

P. E. Joseph, P. Antony
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引用次数: 11

Abstract

In modern SoCs, embedded memories occupy the largest part of the chip area and include an even larger amount of active devices. As memories are designed very dense to the limits of the technology they might be caused of failures. In addition, defect types are becoming more complex and diverse and may escape detection during testing. The memory test methods should evolve to cover these defects corresponding to the target fabrication process and memory design. Built-in Self-Test (BIST) technique is a promising method for different types of test problems. In the memory BIST (MBIST) technology, there is a dedicated BIST controller which is used to implement a specific memory test algorithm when the chip under test (CUT) is in test mode. Implementation and performance comparison of three types of memory BIST architectures were done in this paper. Out of these, two types of MBIST are common but poor performance. By considering the performance parameters in terms of area and speed, a new type has been introduced. The implementations are carried out by using Verilog hardware description language and Xilinx ISE 8.2i.
存储器BIST控制器的VLSI设计与比较分析
在现代soc中,嵌入式存储器占据了芯片面积的最大部分,并且包含更多的有源器件。由于存储器的设计非常密集,达到了技术的极限,它们可能会导致故障。此外,缺陷类型正变得越来越复杂和多样化,并且可能在测试期间无法被检测到。记忆体测试方法应该发展,以涵盖这些缺陷对应的目标制造过程和记忆体设计。内置自测(BIST)技术是一种很有前途的解决不同类型测试问题的方法。在存储器BIST (MBIST)技术中,有一个专用的BIST控制器,用于在被测芯片(CUT)处于测试模式时实现特定的存储器测试算法。本文对三种存储器BIST体系结构进行了实现和性能比较。其中,有两种类型的MBIST是常见的,但性能较差。从面积和转速两方面考虑,提出了一种新型的转子转子。采用Verilog硬件描述语言和Xilinx ISE 8.2i实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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