Effects of heavily doped source on the subthreshold characteristics of nanowire tunneling transistors

Abstract

Band-to-band tunneling field-effect transistors (TFETs) have recently gained interest due to their operation in the sub-60 mV/decade limit which makes them ideal for reducing power dissipation in integrated circuit. III–V nanowire (NW) such as InSb NW TFETs show promise for ultra-low power and high-speed devices [1] due to its narrow direct bandgap.