Fast TDDB for early reliability monitoring

Abstract

This work presents a new experimental setup to perform highly accelerated Time Dependent Dielectric Breakdown (TDDB) in constant voltage stress (CVS) mode with capability of collecting failure distributions in sub millisecond regime. The new apparatus is capable of collecting failure times down to tens of microseconds and we demonstrate that power law dependence with respect to gate voltage down to hundreds of microseconds is valid irrespective of technology. We argue that the implementation of fast TDDB setup for early reliability evaluation would complement the use of voltage ramped stress (VRS), shorten the time for learning cycles, and provide early guidance for reliability assessments.