RF-MEMS from DC to Millimeter-wave

Abstract

We have developed a hollow cavity structure and two types of RF-MEMS switches. The one has less parasitic capacitance to be used in high frequency band with the hollow structure. The other has compact structure with a common bias electrode to a signal line. This type suits for the cellular phone frequencies. In this paper, we introduce both of the switches, and discuss on the future applications of the RF-MEMS