Design of broadband Low Noise Amplifier (LNA) 4G LTE TDD 2.3 GHz for modem application

Ahmad Sidik, Maulana Yusuf Fathany, B. R. Alam
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引用次数: 5

Abstract

This paper discusses the design and simulation of Low Noise Amplifier (LNA) for 4G LTE communication system at 2.3 GHz. The design and simulation are performed on Advance Design System (ADS) design suite. Low noise transistor ATF-54143 with minimum noise figure of 0.46 dB is used with class A bias circuit. Drain current and drain to source voltage are measured to be 28.07 mA and 2.77 volt with supply voltage of 5 volt. Noise figure as low as 0.9 dB is used to compensate the 13.8 dB gain of the amplifier. Simulation with QPSK modulation and channel modeling is performed and yield the same transmitted and received data.
用于调制解调器应用的宽带低噪声放大器(LNA)的设计
本文讨论了2.3 GHz 4G LTE通信系统低噪声放大器(LNA)的设计与仿真。在先进设计系统(ADS)设计套件中进行了设计和仿真。低噪声晶体管ATF-54143,最小噪声系数为0.46 dB,用于A类偏置电路。漏极电流和漏极源电压测量为28.07 mA和2.77伏,电源电压为5伏。低至0.9 dB的噪声系数用于补偿放大器的13.8 dB增益。采用QPSK调制和信道建模进行了仿真,得到了相同的发送和接收数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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