{"title":"Temperature operation of FDSOI devices with metal gate (TaSiN) and high-k dielectric","authors":"J. Pretet, A. Vandooren, S. Ciistoloveanu","doi":"10.1109/ESSDERC.2003.1256941","DOIUrl":null,"url":null,"abstract":"Experimental results for low and high temperature operation are presented on advanced FDSOI transistors with mid-gap metal gated thin film and high-k dielectric. The temperature dependence of the threshold voltage, subthreshold swing, transconductance and electron mobility is used to analyze the quality of Si film/high-k interface as well as transport mechanisms.","PeriodicalId":350452,"journal":{"name":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2003.1256941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
Experimental results for low and high temperature operation are presented on advanced FDSOI transistors with mid-gap metal gated thin film and high-k dielectric. The temperature dependence of the threshold voltage, subthreshold swing, transconductance and electron mobility is used to analyze the quality of Si film/high-k interface as well as transport mechanisms.