Broadband performance of multi-section step-line impedance matching of LD-MOSFET RF amplifier at 900MHz LTE band

Abstract

Design and broadband rf characterization of an RF Amplifier using LD-MOSFET with broadband impedance matching approach has been performed at 900MHz LTE band. Broadband matching impedance using 2-section and 3-section step-line combined with a final A/4-wave line of microstripe structures have been implemented at the input and output, respectively. The LD-MOSFET RF Ampilifier shows broadband performance of S21 measured from 800MHz to 1GHz with center frequency at 900MHz. S11 and S22 measurement from 800MHz to 900MHz shows broadband behavior with both circular curves centering the origin. Non optimized impedance matching results in S21 of 2.2 A 62° or about 6.9dB in magnitude at 900MHz.