Effect of strain relaxation on the drain conductance in AlGaN/GaN HEMTs

2012 International Conference on Engineering and Technology (ICET) Pub Date : 2012-12-31 DOI:10.1109/ICENGTECHNOL.2012.6396129

A. Bellakhdar, A. Telia, L. Semra, A. Soltani

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引用次数: 2

Abstract

The aim of this work is to study the potential offered by microwave power in the device AlmGa1-mN/GaN HEMT. The effects of technological and electrical parameters such as the aluminum mole fraction "m", the thickness of the AlGaN doped layer "dd" and doping concentration "Nd" in the output conductance are studied taking into account the effects of spontaneous and piezoelectric polarizations in the heterojunction AlGaN/GaN and the relaxation of the crystal lattice induced by the aluminum mole fraction. We presented an analytical model for the electrons concentration "ns" in the 2DEG and the current Ids in the channel for strong inversion regime by solving the Poisson equation and Schrödinger self-consistent calculations. From the analytical model of the current Ids including the effects of spontaneous and piezoelectric polarizations, and lattice relaxation, the output conductance gds according to the voltage Vds are deduced. We note that, the increasing of "m" and "Nd" increase the carrier density "ns" in the 2DEG. Although, the increase of the doped layer thickness increases the output conductance. The influence of the crystal lattice relaxation on the electrical performance acts directly on the threshold voltage if the value of the mole fraction exceeds 0.38.

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应变松弛对AlGaN/GaN hemt漏导的影响

这项工作的目的是研究微波功率在AlmGa1-mN/GaN HEMT器件中提供的潜力。考虑到AlGaN/GaN异质结中自发极化和压电极化的影响以及铝摩尔分数引起的晶格弛豫，研究了铝摩尔分数(m)、掺杂层厚度(dd)和掺杂浓度(Nd)等工艺参数和电学参数对输出电导的影响。我们通过求解泊松方程和Schrödinger自一致计算，建立了2DEG中电子浓度ns和强反转区通道中电流id的解析模型。从包含自发极化、压电极化和晶格弛豫效应的电流id解析模型出发，推导出了与电压Vds相关的输出电导gds。我们注意到，随着“m”和“Nd”的增加，载流子密度“ns”在2DEG中增加。然而，随着掺杂层厚度的增加，输出电导增加。当摩尔分数大于0.38时，晶格弛豫对电学性能的影响直接作用于阈值电压。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 International Conference on Engineering and Technology (ICET)

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