Flash Lamp Annealing Latest Technology for 45nm device and Future devices

Abstract

FLA (flash lamp annealing) is used in 65nm generation devices manufacturing. For next 45nm and future generation devices, we have picked up 3 key subjects related to milli-second annealing: process controllability, S/D (source drain) activation, silicidation. No need to say, process controllability is very important for device manufacturing. And process requirement for S/D activation and silicidation controllability is becoming more and more severe. Under evaluation of these subjects, it became clear that FLA technology is still a hopeful candidate for 45nm device and future