I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, I. Hosako, H. Hamada, T. Kosugi, M. Yaita, A. Moutaouakil, H. Matsuzaki, O. Kagami, T. Takahashi, Y. Kawano, Y. Nakasha, N. Hara, D. Tsuji, K. Isono, S. Fujikawa, H. Fujishiro
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引用次数: 2
Abstract
We have improved the performances of InP-based HEMTs and MMICs for terahertz-wave wireless communications using a high frequency carrier wave around 300 GHz in an R&D program launched by the Ministry of Internal Affairs and Communications, Japan (MIC). Furthermore, we also have developed GaN and InSb-based HEMTs in another research. In this paper, we demonstrated the performances of InP, GaN and InSb-HEMTs, and InP-MMICs for power amplifier and low-noise amplifier operated around 300 GHz.
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