Systems are made from transistors: UDSM technology creates new challenges for library and IC development

Ulf Schlichtmann
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引用次数: 2

Abstract

The progress of silicon process technology relentlessly marches on. Moore's law still holds, the number of transistors that can be integrated on an IC doubles approximately every 18 months. The inability of system designs to keep up with this ever increasing number of available transistors has been debated for a long time, many solutions have been proposed. Now, as 130 nm processes enter volume production, 90 nm yields first engineering samples, and 65 nm processes are being developed, the design productivity crisis is exacerbated by the fact that very difficult design challenges are inherent in Ultra-Deep Submicron (UDSM) technologies. They threaten the approach of abstracting technological features away at higher levels, thus endangering design productivity even more. This paper outlines current challenges, presents approaches to address them and proposes further areas for research.
系统由晶体管构成:UDSM技术为库和集成电路的开发带来了新的挑战
硅制程技术的进步日新月异。摩尔定律仍然成立,集成在集成电路上的晶体管数量大约每18个月翻一番。系统设计无法跟上可用晶体管数量不断增加的问题已经争论了很长时间,提出了许多解决方案。现在,随着130纳米工艺进入量产阶段,90纳米工艺产生第一批工程样品,65纳米工艺正在开发中,超深亚微米(UDSM)技术固有的非常困难的设计挑战加剧了设计生产力危机。它们威胁到在更高层次上抽象技术特征的方法,从而进一步危及设计生产力。本文概述了当前的挑战,提出了解决这些挑战的方法,并提出了进一步的研究领域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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