Single Stitch Low Loop Capability and Optimization on Al 500um Wire for Top Side Cooling Package

Z. Abdullah, VillamorRamos Macaric
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Abstract

The introduction of new package to accommodate Power silicon technologies with die sizes ranging from a minimum A mm2 to the maximum B mm2 with gullwing feature introduced new challenge to Al 500um wire size as the clearance between the highest looping wire to the top package becomes narrower and critical. The downset dimension of the new package reduced by 41% (from 760 µm to 350um with reference to existing package) leaving the looping clearance now only 1000um from previously 1400um for Al 500um wire to have an ample space for looping formation (measure from the lead post). This will cause a new challenge to be proven for looping formation as it becomes critical. Initial feasibility study shows an evidence of expose wire from the molding compound on new package and package stack analysis also revealed potential of having exposed wire in ppm level. Looping optimization for single stitch has been conducted and able to perform a stable looping formation within the 1000um clearance for Al 500um wire. A new specification for the maximum looping has been implemented to ensure all the readings for maximum wire loop heights are under production control. This paper describes in details the looping optimization and the actual capability demonstrated for Al 500um wire to enable the project to be released for production without any issue in the project qualifications and production released in Dec 2017. The new looing capability for stable production has been demonstrated for such a low loop (< 800um) with critical looping clearance (within 1000um) for Al 500um wire and passed the Automotive requirements. This performance will enhance to enable another new package platform to be introduced in the semiconductor industry with Top Side Cooling capability which currently under feasibility stage.
单针低回路性能和优化铝500um线的顶部冷却包
采用新的封装以适应功率硅技术,其芯片尺寸范围从最小的a mm2到最大的B mm2,具有鸥翼特性,对Al 500um线尺寸提出了新的挑战,因为最高环路线与顶部封装之间的间隙变得越来越窄和关键。新封装的下置尺寸减少了41%(与现有封装相比,从760 μ m降至350um),使得铝500um线的环隙从之前的1400um降至1000um,从而为环形成提供了充足的空间(从引线开始测量)。随着循环地层变得至关重要,这将对其进行验证带来新的挑战。初步的可行性研究表明,有证据表明,新包装上的成型化合物中有暴露的电线,而包装堆叠分析也表明,暴露的电线可能达到ppm水平。已经进行了单针的环圈优化,并且能够在Al 500um线的1000um间隙内执行稳定的环圈形成。一项新的最大回路规范已经实施,以确保所有最大线圈高度的读数都在生产控制之下。本文详细介绍了Al 500um线材的环路优化和演示的实际性能,使该项目在2017年12月发布的项目资质和生产中没有任何问题。对于Al 500um线材的低回路(< 800um)和临界回路间隙(在1000um以内),已经证明了稳定生产的新寻找能力,并通过了汽车要求。这一性能将增强,使半导体行业引入另一个新的封装平台,该平台具有顶部冷却能力,目前处于可行性阶段。
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