A novel methodology for thermal characterization of power packages in high current applications

2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2013-04-14 DOI:10.1109/EUROSIME.2013.6529942

Byoungok Lee, A. Moon, Joonseo Son, Jihwan Kim

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Abstract

This article describes the thermal characterization of semiconductor packages that include MOSFET solutions for high current capability applications. MOSFETs have three kinds of electrical characteristic parameters in regards to the heat generation of the silicon die, such as linear, saturation and parasitic diode mode. This paper shows the results of a study on thermal characterization according to those electrical characteristics and parameters. The thermal resistance is defined by the function of the temperature difference between junction to referenced temperature and the power dissipation between them. Therefore, the thermal resistance has a different value due to different heating characteristics such as linear mode, saturation mode and diode mode heating respectively. For this paper, thermal simulation and measurement were conducted using CFD simulation and experimentation. In the results illustrated various thermal characteristics depending on the different structure of packages having either Al bonding directly to the substrate or Al bonding to the lead frame with DBC substrate.

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大功率封装在大电流应用中的热表征新方法

本文描述了半导体封装的热特性，包括用于大电流能力应用的MOSFET解决方案。mosfet在硅晶片的发热方面有三种电特性参数，即线性、饱和和寄生二极管模式。本文给出了根据这些电特性和参数进行热表征的研究结果。热阻由结与参考温度之间的温差和两者之间的功耗的函数来定义。因此，由于不同的加热特性，如线性模式、饱和模式和二极管模式加热，热阻具有不同的值。本文采用CFD模拟和实验的方法进行了热模拟和测量。结果表明不同的热特性取决于不同的封装结构，要么是Al直接与衬底结合，要么是Al与DBC衬底结合的引线框架。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

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