Polysilicon emitter technology

Abstract

The current status of polysilicon emitter technology is reviewed. The advantages of polysilicon emitters in high speed VLSI processes, in particular their high gains and scalability, are highlighted. The physics and metallurgy of the polysilicon/silicon interface is described in detail, and a direct comparison is made with electrical results. It is demonstrated that the polysilicon can be epitaxially regrown to produce an extended single-crystal emitter.<>