In-Line Raman Spectroscopy: High-Throughput Strain Metrology for 3D Devices

Abstract

In-line, nondestructive strain measurements are obtained on high aspect ratio 3D device structures using Raman scatterometry on full 300-mm wafers. In-line Raman spectroscopy allows for the monitoring of high-volume manufacturing, thereby offering benefits that include cost savings and faster and improved process control.