Monolithic FET-Controlled GaN Driver with Pre-Boosting and Robust Dead Time Control for DToF LiDAR Application

Chun-wang Zhuang, Xin Ming, Zijie Ye, Yao Qin, Zhikang Lin, W. Li, H. Yan, Bo Zhang
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Abstract

For monolithic GaN LiDAR driver, in order to achieve high speed narrow pulse and low power consumption, pre-boosting and robust dead time (PBRD) control is proposed to enhance pull-up capability and limit short-through current during transient. A non-BGR under-voltage lockout (UVLO) is also provided for preventing the driver from operating in the event of supply voltage failure. Experimental results show that the proposed driver achieves peak load current of 10A and 2ns pulse width at the operation frequency of 20MHz. The fall and rise time of output pulse are 310ps and 334ps, respectively, and measured dynamic power is 80mW at the operation frequency of 10MHz.
具有预升压和鲁棒死区时间控制的单片fet控制GaN驱动器在dof激光雷达中的应用
对于单片GaN激光雷达驱动器,为了实现高速窄脉冲和低功耗,提出了预升压和鲁棒死区(PBRD)控制,以提高暂态时的上拉能力和限制短通电流。还提供了一个非bgr欠压锁定(UVLO),用于防止驱动器在电源电压故障时运行。实验结果表明,该驱动器在工作频率为20MHz时,峰值负载电流为10A,脉宽为2ns。输出脉冲下降和上升时间分别为310ps和334ps,工作频率为10MHz时实测动态功率为80mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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