AlGaInP-based LEDs with ZnO nanostructures by successive ionic layer adsorption and reaction and hydrothermal methods

Abstract

The authors applied a simple and low-cost successive ionic layer adsorption and reaction (SILAR) and hydrothermal method (Hm) methods to form ZnO nanostructures for AlGaInP-based light-emitting diodes (LEDs). With 20 mA current injection, it was found that forward voltages were all 2.0 V when the 20mA output powers were 0.41, 0.53, 0.56, 0.60, and 0.50 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. Furthermore, it was also found that the formation of the ZnO nanostructure on the top of GaP surface did not degrade the electrical properties.