Effect of thermal nitridation on phosphorus diffusion in SiGe and SiGe:C and its implication on diffusion mechanisms

Abstract

The effectiveness of thermal nitridation in retarding P diffusion in SiGe and SiGe:C is investigated in this study. Three types of masking layers are used to make P diffuse under vacancy injection, interstitial injection, and inert annealing conditions. A secondary ion mass spectroscopy is used to measure the diffusion profiles.