Effect of Gate Metal Work Function on Leakage Current in Single Pocket FDSOI 28 nm Transistor

Abstract

This brief is reporting a useful design to modulate threshold voltage and leakage current in single pocket fully depleted silicon on insulator. A comparative analysis has been made between the device without pocket and single pocket device. Since device size is in nanoscopic scale therefore a peak electric field occurs to mitigate this issue pocket is made. This work highlights the effects of variation in metal gate work function on threshold voltage and leakage current. Analysis shows the E-field distribution in single pocket device is much better than the E-filed distribution in the conventional device. On same metal gate work function 4.3 eV to 4.8 eV single pocket device has better switching speed and low leakage current than that of conventional device. The simulation of both devices has been handled by ALTAS TCAD tool.