Variable proximity multiple exposures in SR Lithography for fabrication of 3D micro/nanostructures

F. Kato, S. Sugiyama
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引用次数: 1

Abstract

The variable proximity multi exposure technique in SR lithography is introduced. This technique provides to fabricate micro/nano gratings include Sub-wavelength gratings. The sub-wavelength gratings for antireflection were fabricated using this technique. Fresnel and Fraunhofer intensity distribution simulation for estimate the properly gap were performed. The simulation was done by the slit width of 150 nm and 250 nm, and the proximity gap was from 0 up to 100 mum. On the other hand, evaluation of proximity gap effect with conventional exposure was performed. We found the appropriate value of the gap for obtaining high contrast, and the gap for provide a taper. The experiment results were in agreement with the calculated result. T Then the multiple exposure with appropriate gap were performed and we were able to obtain the three dimensional sub-wavelength structures.
SR光刻技术在三维微/纳米结构制造中的可变接近度多重曝光
介绍了SR光刻中的可变接近多曝光技术。该技术提供了包括亚波长光栅在内的微纳光栅的制作方法。利用该技术制备了亚波长增透光栅。进行了菲涅耳和弗劳恩霍夫强度分布模拟,以估计合适的间隙。模拟的狭缝宽度分别为150 nm和250 nm,接近间隙为0 ~ 100 nm。另一方面,对传统暴露下的接近间隙效应进行了评价。我们找到了合适的间隙值,以获得高对比度,并提供了一个锥度的间隙。实验结果与计算结果吻合较好。然后在适当的间隙进行多次曝光,我们可以得到三维亚波长结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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