Design and Process Sensitivity of a Two Stage 6-18 GHz Monolithic Feedback Amplifier

Abstract

The design of a 6-18 GHz, two stage monolithic feedback amplifier is discussed, and the critical process and FET parameters are identified. Variations in circuit performance experienced during a pilot production run are correlated with the predictions of a sensitivity analysis. The critical parameters are substrate height, GaAs sheet resistivity, gate-source capacitance, transconductance, and drain-source resistance. Measured results show the importance of substrate height and sheet resistivity in the control of gain flatness.