SiGe BiCMOS Technologies for Applications above 100 GHz

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI:10.1109/CSICS.2012.6340061

H. Rücker, B. Heinemann, A. Fox

引用次数: 10

Abstract

This paper describes recent advances in SiGe HBT technology. Technological developments introduced for improved radio-frequency performance are discussed. HBT device characteristics are presented for a 0.13 μm SiGe BiCMOS technology with fT/fmax of 300/500 GHz and mini-mum CML ring oscillator gate delays of 2.0 ps. Sample circuit applications for operating frequencies above 100 GHz are discussed.

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适用于100ghz以上应用的SiGe BiCMOS技术

本文介绍了SiGe HBT技术的最新进展。讨论了改进射频性能的技术发展。介绍了0.13 μm SiGe BiCMOS技术的HBT器件特性，fT/fmax为300/500 GHz，最小CML环振荡器门延迟为2.0 ps，并讨论了工作频率在100 GHz以上的示例电路应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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