Segmented Digital SiPM

V. Vinayaka, Sachin P. Namboodiri, Angsuman Roy, R. J. Baker
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引用次数: 2

Abstract

A digital silicon photomultiplier (SiPM) using segmentation technique is designed, simulated and fabricated in the AMS 0.35 µm SiGe BiCMOS process. The digital SiPM is intended for photon counting applications. The digital SiPM consists of 16 avalanche photodiodes (APD) each with active area of 24 µm x 24 µm arranged in a 4x4 array with series 236 kΩ quench resistors. The SiPM has a peak responsivity at 490 nm wavelength and a fill factor of 12.6 %. The digital SiPM generates an output 5-bit digital word that indicates the number of APDs triggered in the SiPM array at the rising edge of clock. Simulation results show that the digital SiPM can work at a maximum speed of 100 MS/s and uses 64.6 mW of power. The digital SiPM occupies an area of 0.38 mm2.
分段数字SiPM
采用AMS 0.35µm SiGe BiCMOS工艺,设计、仿真并制作了一种采用分段技术的数字硅光电倍增管(SiPM)。数字SiPM用于光子计数应用。数字SiPM由16个雪崩光电二极管(APD)组成,每个APD的有效面积为24 μ m x 24 μ m,排列在4x4阵列中,配有236系列kΩ猝灭电阻。SiPM在490nm波长处有峰值响应,填充系数为12.6%。数字SiPM产生一个输出5位数字字,表示时钟上升沿SiPM阵列中触发的apd的数量。仿真结果表明,该数字SiPM的最大工作速度为100 MS/s,功耗为64.6 mW。数字SiPM占地面积为0.38 mm2。
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