New Contact Metallization Scheme for FinFET and Beyond

Abstract

A new metallization scheme of Co/CoTix alloy is proposed to replace conventional W contact plug and TiN/Ti barrier so as to alleviate increasing parasitic resistance of MOL with device scaling in sub-10 nm node. Annealing of the CoTix alloy layer led to the formation of epitaxial Co silicide and TiOx at the Co/Si interface. With this interface structure, a low contact resistivity of 10^{-9}\ Ω\ cm}^{2} was obtained on highly doped n-Si.