A self-aligned emitter base NiSi electrode technology for advanced high-speed bipolar LSIs

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1992-10-07 DOI:10.1109/BIPOL.1992.274076

T. Iinuma, N. Itoh, K. Inou, H. Nakajima, S. Matsuda, I. Kunishima, K. Suguro, Y. Katsumata, H. Iwai

引用次数: 10

Abstract

The characteristics of double polysilicon self-aligned bipolar transistors with advanced 0.4- mu m NiSi salicide base electrodes are reported. Since NiSi/polysilicon contact resistance is lower than that of TiSi/sub 2//polysilicon and the process temperature is lower, the result is a high-performance bipolar device. A very low base resistance of 91 Omega was obtained.<>

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一种用于高速双极lsi的自对准射极基极NiSi电极技术

报道了采用先进的0.4 μ m硅酸盐基电极的双多晶硅自对准双极晶体管的特性。由于NiSi/多晶硅的接触电阻低于TiSi/ sub2 //多晶硅，且工艺温度更低，因此得到了高性能的双极器件。得到了极低的91 ω的基极电阻

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting

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