Behavioral modeling to circuit design steps of an injection locked CDR in 0.18µm-CMOS

Weilin Xu, Di Wu, C. Zhu, Jihai Duan, Baolin Wei, Xueming Wei, Fabi Zhang
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引用次数: 0

Abstract

In this paper the design, simulation and measurement procedure of injection locked clock and data recovery(CDR) circuit is discussed. The non-idealities of the CDR circuit such as power supply noise and lock detection are modeled behaviorally using Verilog-A. The required CDR specifications can be extracted in a very short period of simulation time with the designed behavioral model. The designed CDR features with full speed, dual loop, coarse and fine tuning and injection locked technology. The proposed CDR is fabricated with SMIC 0.18um 1P6M process and consumes 36mW from a single 1.8 V supply. Measured results show that the 250Mbps input NRZ signal could be correctly recovered with 2ps root-mean-square jitter.
0.18µm cmos注入锁定CDR电路设计步骤的行为建模
本文讨论了注入锁定时钟和数据恢复(CDR)电路的设计、仿真和测量过程。使用Verilog-A对CDR电路的非理想性(如电源噪声和锁检测)进行了行为建模。利用所设计的行为模型,可以在很短的仿真时间内提取所需的CDR规范。设计的CDR具有全速、双环、粗微调和注入锁定技术。提出的CDR采用中芯国际0.18um 1P6M工艺制造,单1.8 V电源消耗36mW。实测结果表明,在2ps的均方根抖动下,可以正确恢复输入250Mbps的NRZ信号。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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