Thermoelectric properties of Sb-doping in the TiNiSn/sub 1-x/Sb/sub x/ half-Heusler system

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI:10.1109/ICT.1999.843398

S. Bhattacharya, V. Ponnambalam, A. Pope, P. Alboni, Y. Xia, T. Tritt, S. J. Poon

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Abstract

Half Heusler alloys, MNiSn (M=Zr, Hf, Ti) systems, have recently been studied for their potential as new thermoelectric materials. They have shown both high thermopower (/spl alpha/) values (40-250 /spl mu/V/K) and reasonable values of electrical resistivity, /spl rho/ (0.1-8 m/spl Omega/-cm). However, the thermal conductivity in these systems is high for a potential thermoelectric material, on the order of 4-10 W/m-K. In an effort to reduce the thermal conductivity through alloy scattering, Sb is substituted on the Sn site with compositions TiNiSn/sub 1-x/Sb/sub x/ where x=0 to 0.1. With this substitution, the thermopower is only slightly reduced while the resistivity is reduced by approximately one order of magnitude resulting in marked improvement in the power factor (/spl alpha//sup 2/T//spl rho/). Thermopower, resistivity, and thermal conductivity have been measured on a series of Sb doped TiNiSn samples from 10 K

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Sb掺杂TiNiSn/sub - 1-x/Sb/sub -x/ half-Heusler体系的热电性质

半Heusler合金，MNiSn (M=Zr, Hf, Ti)体系，作为新型热电材料的潜力最近得到了研究。它们具有较高的热功率(/spl alpha/)值(40-250 /spl mu/V/K)和合理的电阻率值(/spl rho/ (0.1-8 m/spl Omega/-cm)。然而，对于潜在的热电材料来说，这些系统的导热系数很高，约为4-10 W/m-K。为了通过合金散射降低导热系数，在Sn位点上用TiNiSn/sub - 1-x/Sb/sub -x/ (x=0 ~ 0.1)代替Sb。通过这种替换，热功率仅略微降低，而电阻率降低了大约一个数量级，从而显著改善了功率因数(/spl alpha//sup 2/T//spl rho/)。在10 K

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Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)

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