150 nm copper metalized GaAs pHEMT with Cu/Ge ohmic contacts

E. Anichenko, V. Arykov, E. Erofeev, V. Kagadei
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引用次数: 9

Abstract

The fully Cu-metalized GaAs pHEMT using developed Cu/Ge based ohmic contacts and Ti/Mo/Cu 150 nm T-shape gate has been successfully fabricated for the high-frequency applications. The fabricated Cu-metalized pHEMT has a maximum drain current of 360 mA/mm, off-state gate-drain breakdown of 7 V and a transconductance peak of 320 mS/mm at VDS = 3V. The maximum stable gain value was about 15 dB at frequency 10 GHz. The current gain cut-off frequency of the copper metalized device is about 60 GHz at Vds = 3 V and maximum frequency of oscillations is beyond 100 GHz. The work investigated in detail the formation of Cu/Ge ohmic contacts to n-GaAs with an atomic hydrogen pre-annealing step. It was shown that when the first preliminary annealing is carried out in a flow of atomic hydrogen with a flow density of atoms of 1013–1016 at. cm2 s−1 a reduction in specific contact resistance by 2–2.5 times is observed. The reduction in specific contact resistance is apparently caused by the action of the hydrogen atoms which minimise the rate of the oxidizing reactions and activate solid phase reactions forming the ohmic contact during the thermal treatment process.
150nm铜金属化GaAs pHEMT与Cu/Ge欧姆触点
利用开发的Cu/Ge基欧姆触点和Ti/Mo/Cu 150 nm t形栅极,成功制备了全Cu金属化GaAs pHEMT,用于高频应用。制备的金属化铜pHEMT的最大漏极电流为360 mA/mm,失态栅极-漏极击穿为7 V,在VDS = 3V时的跨导峰值为320 mS/mm。在10 GHz频率下,最大稳定增益值约为15 dB。在Vds = 3 V时,铜金属化器件的电流增益截止频率约为60 GHz,振荡的最大频率超过100 GHz。本文详细研究了原子氢预退火过程中Cu/Ge与n-GaAs欧姆接触的形成。结果表明,在原子密度为1013 ~ 1016 at的氢原子流中进行第一次初步退火。Cm2 s−1,观察到比接触电阻降低2-2.5倍。比接触电阻的降低显然是由氢原子的作用引起的,氢原子在热处理过程中使氧化反应的速率最小化,并激活形成欧姆接触的固相反应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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