H. Adachi, M. Kitabatake, H. Higashino, K. Setsune, K. Wasa
{"title":"Basic thin film processing for perovskite materials","authors":"H. Adachi, M. Kitabatake, H. Higashino, K. Setsune, K. Wasa","doi":"10.1109/ISAF.1990.200240","DOIUrl":null,"url":null,"abstract":"Basic thin-film processing for ferroelectric perovskite oxides was investigated. Amorphous, polycrystal, and epitaxial thin films of Pb-based perovskite ferroelectrics were prepared by RF-magnetron sputtering and their properties are discussed. By utilizing the epitaxial PLZT films with excellent ferroelectric properties, several applications to optical electronic devices were examined, and an optical transmission system was constructed using high-speed PLZT optical switches. Trends in ferroelectric thin films are discussed.<<ETX>>","PeriodicalId":269368,"journal":{"name":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1990.200240","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Basic thin-film processing for ferroelectric perovskite oxides was investigated. Amorphous, polycrystal, and epitaxial thin films of Pb-based perovskite ferroelectrics were prepared by RF-magnetron sputtering and their properties are discussed. By utilizing the epitaxial PLZT films with excellent ferroelectric properties, several applications to optical electronic devices were examined, and an optical transmission system was constructed using high-speed PLZT optical switches. Trends in ferroelectric thin films are discussed.<>