A numerical technique for parameters extraction of a p-n junction diode in the presence of parasitic resistance

Abstract

This paper proposes a numerical technique to extract the diode parameters and reverse saturation current by using the forward I–V characteristic, series and parallel parasitic resistances will also be determined. Using the p-n junction I–V characteristics (simulated or acquired) and defining an arbitrary set of predetermined parameters, the exponential I–V characteristics has been set linear (linearized). Using a specific numerical technique programmed with Matlab over the linear representation allows the extraction of the p-n junction model parameters. To test the validity of this method, a Matlab code has been developed to extract the Diode's parameters in order to be compared later with the diode real parameters.