H. Onoda, N. Hamamoto, T. Nagayama, M. Tanjyo, S. Umisedo, N. Maehara, Y. Kawamura, Y. Nakashima, M. Hashimoto, H. Yoshimi, S. Sezaki, K. Kawakami, J. Reyes, S. Prussin
{"title":"Carrier activation in cluster boron implanted Si","authors":"H. Onoda, N. Hamamoto, T. Nagayama, M. Tanjyo, S. Umisedo, N. Maehara, Y. Kawamura, Y. Nakashima, M. Hashimoto, H. Yoshimi, S. Sezaki, K. Kawakami, J. Reyes, S. Prussin","doi":"10.1109/IWJT.2010.5474917","DOIUrl":null,"url":null,"abstract":"Boron retained dose and carrier activation after spike RTA in Cluster B<inf>18</inf><sup>+</sup> (Octadecaborane : B<inf>18</inf>H<inf>11</inf><sup>+</sup>) implanted Si have been investigated comparing with BF<inf>2</inf> beamline implanted Si. The retained dose estimated by SIMS depth profile integration is higher in B<inf>18</inf> samples. In the same implant set dose, carrier concentrations in B<inf>18</inf> samples show almost twice compared with BF<inf>2</inf> samples although mobilities are almost the same in both samples. This means that activation ratio of B<inf>18</inf> sample is much higher compared with that of BF<inf>2</inf> sample. This is one of the advantages of cluster ion implantation.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"138 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Workshop on Junction Technology Extended Abstracts","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2010.5474917","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Boron retained dose and carrier activation after spike RTA in Cluster B18+ (Octadecaborane : B18H11+) implanted Si have been investigated comparing with BF2 beamline implanted Si. The retained dose estimated by SIMS depth profile integration is higher in B18 samples. In the same implant set dose, carrier concentrations in B18 samples show almost twice compared with BF2 samples although mobilities are almost the same in both samples. This means that activation ratio of B18 sample is much higher compared with that of BF2 sample. This is one of the advantages of cluster ion implantation.
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