An 80ns address-date multiplex 1mb CMOS EPROM

M. Yoshida, T. Akaogi, M. Higuchi, K. Shirai, I. Tanaka
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Abstract

This report will cover an EPROM organized as 64K×16b. Precharging techniques achieved an access time of 80ns Light-shielded cells control switching of redundant word lines.
80ns地址日期多路1mb CMOS EPROM
本报告将介绍一个组织为64K×16b的EPROM。预充电技术实现了80ns光屏蔽电池控制冗余字线切换的接入时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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