Total Ionizing Dose and Reliability Evaluation of the ST-DDR4 Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI:10.1109/REDW56037.2022.9921476

Sergeh Vartanian, J. Yang-Scharlotta, G. Allen, A. Daniel, D. Costanzo, F. Mancoff, D. Symalla, Andy Olsen

引用次数: 1

Abstract

We present total ionizing dose (TID) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM, and its effects on the reliability of the magnetic tunnel junctions (MTJs).

查看原文本刊更多论文

ST-DDR4自旋转移转矩磁阻随机存取存储器(STT-MRAM)总电离剂量及可靠性评价

我们对Everspin Technologies的1Gb非挥发性ST-DDR4自旋传递扭矩MRAM进行了总电离剂量(TID)评估，并分析了其对磁隧道结(MTJs)可靠性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)

自引率

0.00%

发文量