High-performance lateral DMOSFET with oxide sidewall-spacers

Abstract

A new lateral DMOSFET which utilizes oxide sidewall-spacers is described. The effective channel length is precisely controlled by the length of the spacer. The lateral DMOSFET with a channel length of 0.4 /spl mu/m shows a low channel resistance keeping high punch-through blocking capability. The process is compatible with the conventional 1 /spl mu/m Bi-CMOS process. The device characteristics are predicted by two-dimensional process and device simulators. Measurement results are also described. The developed DMOSFET shows an excellent specific on-resistance of 0.143 /spl Omega//spl middot/mm/sup 2/ and can withstand up to around 80 V.