Low current cross-point memory using gadolinium-oxide switching material

Abstract

Low current cross-point memory using gadolinium-oxide switching material in an IrOx/GdOx/W structure has been investigated for the first time. Memory device shows low current bipolar resistive switching phenomena and self-compliance phenomena as well, repeatable switching cycles, good uniformity, long program/erase endurance of >60k every cycles, and good data retention of >104 s at a low CC of 50 μA.