Crossbar sector addressing scheme on SRAMs

Lazaros Spyridopoulos, Nikos Konofaos, Theodoras Simopoulos, G. Alexiou
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引用次数: 1

Abstract

Typical memory addressing, where a row of cells that forms the memory word, is addressed every time the memory is accessed, has the disadvantage of decreased addressing flexibility, originating from the strict addressing method and leading to addressing limitations. In this work we present and implement the crossbar addressing scheme, where the memory is addressed in a two dimensional way, using two decoders on each direction. Although crossbar addressing is mentioned on references there is no known implementation on SRAM memories. We extend this scheme proposing the new Sector addressing scheme, based on crossbar addressing.
ram上的横杆扇区寻址方案
典型的存储器寻址,即在每次访问存储器时都对构成存储器字的一行单元进行寻址,这种寻址方法的缺点是寻址灵活性降低,这源于严格的寻址方法并导致寻址限制。在这项工作中,我们提出并实现了交叉栏寻址方案,其中存储器以二维方式寻址,每个方向使用两个解码器。虽然在参考文献中提到了交叉栏寻址,但在SRAM存储器上没有已知的实现。我们对该方案进行了扩展,提出了基于交叉寻址的扇区寻址方案。
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