Novel smart card SoC memory architecture based on embedded STT-MRAM

Kaiwen Lu, Feng Yan, Xingjie Liu, Dongsheng Liu, Peng Liu, Bo Liu
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引用次数: 1

Abstract

In the applications of Internet of Things (IoT), the limitations of the common NVM + RAM hybrid memory architecture cannot simultaneously provided the solution of lower power, low resource consumption and nonvolatile which are critical for IoT designing. Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has become a major candidate for on-chip memory because of its ideal memory characteristics, such as nonvolatile, near zero standby leakage power and compatibility with CMOS. Therefore, this paper focuses on the application of STT-MRAM in the storage of IoT. We design the eSTT-MRAM non-hybrid memory architecture for smart card SoCs. The prototype verification results on Xilinx's ARTIX-7 XC7A100T FPGA platform show that the STT-MRAM-based memory architecture can greatly improve the operating efficiency of SoC programs and reduce the dynamic power consumption of the system due to data storage.
基于嵌入式STT-MRAM的新型智能卡SoC存储器结构
在物联网(IoT)应用中,常见的NVM + RAM混合存储架构的局限性无法同时提供低功耗、低资源消耗和非易失性的解决方案,而这些正是物联网设计的关键。自旋转移扭矩磁随机存取存储器(STT-MRAM)由于其理想的存储特性,如非易失性、接近零待机泄漏功率和与CMOS兼容,已成为片上存储器的主要候选。因此,本文重点研究STT-MRAM在物联网存储中的应用。我们设计了用于智能卡soc的eSTT-MRAM非混合存储器架构。在赛灵思ARTIX-7 XC7A100T FPGA平台上的原型验证结果表明,基于stt - mram的存储器架构可以大大提高SoC程序的运行效率,并降低系统因数据存储而产生的动态功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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