A 60GHz transmitter with integrated antenna in 0.18/spl mu/m SiGe BiCMOS technology

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers Pub Date : 2006-09-18 DOI:10.1109/ISSCC.2006.1696104

Chi-Hsueh Wang, Yi-Hsien Cho, Chin-Shen Lin, Huei Wang, Chun-Hsiung Chen, D. Niu, J. Yeh, Chwan-Ying Lee, J. Chern

引用次数: 41

Abstract

A 60GHz SiGe HBT transmitter IC with integrated antenna in a standard-bulk 0.18mum SiGe BiCMOS process is reported. This chip is composed of a VCO, a sub-harmonic mixer, a PA, and a tapered-slot antenna, all with differential designs. The measured results show 15.8dBm output power and 20.2dB conversion gain with 281mWdc power consumption

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采用0.18/spl mu/m SiGe BiCMOS技术的60GHz集成天线发射机

报道了一种采用标准体积0.18 μ m SiGe BiCMOS工艺的集成天线的60GHz SiGe HBT发射机IC。该芯片由压控振荡器、次谐波混频器、扩音器和锥形槽天线组成，均采用差分设计。测量结果显示输出功率为15.8dBm，转换增益为20.2dB，功耗为281mWdc

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers

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