Low noise, high linearity and low power BiCMOS mixer for RF applications

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI:10.1109/ICCDCS.2000.869800

S. Colomines, T. Arnaud, T. Parra, J. Graffeuil, R. Plana

引用次数: 9

Abstract

This paper presents a low IF mixer featuring MOS devices in the RF and the active load stages for DCS applications which have been optimized with respect to the supply voltage (2.2 V), current consumption (<10 mA), gain (10 dB), linearity (IIP3=8.5 dBm) and noise (DSB Nf=13 dB @100 kHz).

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低噪声，高线性和低功耗的BiCMOS混频器用于射频应用

本文介绍了一种低中频混频器，在RF和DCS应用的主动负载级中具有MOS器件，该混频器已针对电源电压(2.2 V)，电流消耗(<10 mA)，增益(10 dB)，线性度(IIP3=8.5 dBm)和噪声(DSB Nf=13 dB @100 kHz)进行了优化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)

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